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光貿易/10 Gb/s PD/10 Gb/s GaAs Photodiode Chip/PDCS70T-GS  
メーカー Albis Optoelectronics     【アルビス】
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製品名 :10 Gb/s PD, 10 Gb/s GaAs Photodiode Chip, PDCS70T-GS
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カテゴリー フォトダイオード
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光貿易/10 Gb/s PD/10 Gb/s GaAs Photodiode Chip/PDCS70T-GS
 
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製品概要/Product Overview
The PDCS70T-GS is a high-speed GaAs photodiode chip with a dual-pad layout and an optical aperture with a diameter of 70 μm allowing easy coupling to multi-mode fibers. The top-illuminated p-i-n photodiode structure is optimized for multi-mode fiber based data- and telecom applications up to 12 Gb/s and offers an excellent responsivity and high speed of response in the wavelength region from 830 to 860 nm. The device has a low capacitance and achieves full speed at low bias voltages.
The photodiode is manufactured with a low reflectivity AR coating, providing low back reflection and high return loss over the specified wavelength range. The chip is available with a pad metallization optimized for wire-bonding with the pads positioned to enable easy and direct bonding to any TIA layout. In addition, the small chip footprint saves valuable space in small packages such as TO-46.
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光貿易/10 Gb/s PD/10 Gb/s GaAs Photodiode Chip/PDCS70T-GS
PDFファイル:137kb

特徴/Key Features
Large optical aperture: 70 um
Large bandwidth: 10 GHz
Low capacitance: <240 fF
Low dark current: <1 nA
Low bias voltage: 2 V
Pad layout allows easy bonding to any TIA layout
Small chip size for easy assembly on TO headers

 

アプリケーション/Application
10 G Ethernet / Fiber Channel

 


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